Product Overview
The Harrick SplitPea™ represents a breakthrough in ATR nanosampling, offering an innovative and cost-effective alternative to infrared microscopes and diamond anvil cells. Engineered for researchers who need to analyze minute features without the complexity of a full imaging system, the SplitPea™ utilizes a high-efficiency beam condensing architecture to focus the IR beam onto an exceptionally small crystal surface. With a sampling area of less than 250 µm in diameter (for Silicon), it is uniquely capable of isolating specific defects in films, characterizing individual fibers, and measuring nanoliter volumes of liquid with high signal-to-noise performance.
Technical excellence is further defined by its specialized pressure application system. Unlike standard ATRs that apply broad force, the SplitPea™ utilizes a calibrated, flip-up pressure applicator that delivers localized, measured force directly to the point of contact. This ensures superior contact with hard, irregular solids—such as paint chips or geological specimens—while protecting the integrity of the fragile internal optics. Integrated with Harrick’s proprietary PermaPurge™ technology, the system allows for rapid sample and crystal exchange without ever compromising the spectrometer's internal purge, ensuring maximum productivity and data stability.
Key Features
- Smallest Sampling Area: Features an active sampling diameter of less than 250 µm (Si) or 500 µm (Diamond), ideal for micro-scale target analysis.
- Calibrated Localized Pressure: High-precision applicator ensures reproducible, high-pressure contact with hard or curved samples without damaging optics.
- Flexible Crystal Selection: Compatible with Silicon (Si), Germanium (Ge), Zinc Selenide (ZnSe), and Diamond hemispheres to optimize spectral range and penetration depth.
- Enhanced Visual Alignment: Available with an optional 50X viewing microscope or ViewThruPress™ for precise sample positioning over the micro-crystal.
- High-Temperature Ready: Optional heatable sampling plates enable in-situ analysis at temperatures up to 200°C.
Specifications
| Sampling Area | < 250 µm (Si) / < 500 µm (Diamond) |
| Spectral Range | NIR to Far-IR (Crystal dependent) |
| Crystal Options | Si, Ge, ZnSe, Diamond |
| Pressure Applicator | Flip-up, calibrated, localized |
| Max Temperature | Up to 200°C (with optional heated plate) |